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LPE grown GaAs layers from Ga-As-Bi solution

✍ Scribed by M. Panek; M. Ratuszek; M. TŁaczaŁa

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
410 KB
Volume
74
Category
Article
ISSN
0022-0248

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Photoluminescence measurements of GaAs g
Photoluminescence measurements of GaAs grown by liquid phase epitaxy from Ga–Bi solution
✍ M. Ciorga; L. Bryja; J. Misiewicz; R. Paszkiewicz; M. Panek; B. Paszkiewicz; M. 📂 Article 📅 1998 🏛 John Wiley and Sons 🌐 English ⚖ 102 KB 👁 1 views

Thick, intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent (from 0 to 82 at.%Bi) were studied by photoluminescence (PL) at temperature T 2 K. The dependence of the photoluminescence spectrum on the content of Bi in solution was