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Wave morphologies on the surfaces of GaAs and Ga0.65Al0.35As grown LPE

✍ Scribed by M.B. Small; R.M. Potemski


Publisher
Elsevier Science
Year
1977
Tongue
English
Weight
541 KB
Volume
37
Category
Article
ISSN
0022-0248

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Spatially Indirect Excitons in GaAs/Al0.
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We studied the optical properties of GaAs/Al 0X35 Ga 0X65 As asymmetric double quantum wells at T 4X2 K and in the presence of in-plane magnetic fields up to 20 T. In an electric field F 8 45 kV/cm, electrons and holes are respectively confined in the wide and narrow well and form spatially indirect