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Low‐temperature growth of piezoelectric AlN film by rf reactive planar magnetron sputtering

✍ Scribed by Shiosaki, T.; Yamamoto, T.; Oda, T.; Kawabata, A.

Book ID
118037517
Publisher
American Institute of Physics
Year
1980
Tongue
English
Weight
486 KB
Volume
36
Category
Article
ISSN
0003-6951

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✍ Bondar, V. ;Kucharsky, I. ;Simkiv, B. ;Akselrud, L. ;Davydov, V. ;Dubov, Yu. ;Po 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 131 KB 👁 2 views

The technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and properties of films are studied. Spectral parameters of rf-discharge plasma emission of nitrogen used as a working gas are investigated. The dependence of GaN thin film dep