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Low temperature growth of r.f. reactively planar magnetron-sputtered AlN films

✍ Scribed by M. Penza; M.F. De Riccardis; L. Mirenghi; M.A. Tagliente; E. Verona

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
690 KB
Volume
259
Category
Article
ISSN
0040-6090

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The technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and properties of films are studied. Spectral parameters of rf-discharge plasma emission of nitrogen used as a working gas are investigated. The dependence of GaN thin film dep