Low-temperature epitaxial growth of conductive LaNiO3 thin films by RF magnetron sputtering
β Scribed by Naoki Wakiya; Takaaki Azuma; Kazuo Shinozaki; Nobuyasu Mizutani
- Book ID
- 108388400
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 707 KB
- Volume
- 410
- Category
- Article
- ISSN
- 0040-6090
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## Abstract Hexagonal aluminium nitride (AlN) and zinc oxide (ZnO) thin films have been deposited by DC and RF reactive magnetron sputtering at room temperature. For a first set of samples, sputtered AlN films were deposited on silicon ZnO substrate. For a second set, ZnO films were deposited on Al
The technologies of fabrication of thin film phosphors based on gallium nitride using rf-magnetron sputtering are developed and properties of films are studied. Spectral parameters of rf-discharge plasma emission of nitrogen used as a working gas are investigated. The dependence of GaN thin film dep