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Low temperature ohmic contacts to gallium arsenide using In and Al

✍ Scribed by Healy, M.P.; Mattauch, R.J.

Book ID: 114592081
Publisher: IEEE
Year: 1976
Tongue: English
Weight: 159 KB
Volume: 23
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1976.18412

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## Abstract In this paper we present the results of study of thin oxide films: CdO, ZnO and RuSiO~4~ used as transparent ohmic contacts to GaSb/InGaAsSb/AlGaAsSb photodiodes. Thin oxide films with thickness of 50 nm were deposited by magnetron sputtering. CdO and RuSiO~4~ were formed in a reactive