Transparent ohmic contacts to GaSb/In(Al)GaAsSb photovoltaic cells
✍ Scribed by Golaszewska, K. ;Kamińska, E. ;Piotrowska, A. ;Rutkowski, J. ;Kruszka, R. ;Kowalczyk, E. ;Papis, E. ;Wawro, A. ;Piotrowski, T. T.
- Book ID
- 105364175
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 208 KB
- Volume
- 204
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
In this paper we present the results of study of thin oxide films: CdO, ZnO and RuSiO~4~ used as transparent ohmic contacts to GaSb/InGaAsSb/AlGaAsSb photodiodes. Thin oxide films with thickness of 50 nm were deposited by magnetron sputtering. CdO and RuSiO~4~ were formed in a reactive process in Ar–O~2~ atmosphere, from Cd and Ru~1~Si~1~ targets, respectively. ZnO films were deposited directly from ZnO target by rf sputtering. We have shown that application of CdO, ZnO and RuSiO~4~ transparent films instead of conventional metal‐based contacts enables to improve of photodiode properties. As a result, GaSb/InGaAsSb/AlGaAsSb photodiodes with detectivity D * increased by factor of 2 and reduced by factor of 3 the series resistance were obtained. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)