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Low pressure and low temperature gallium arsenide homoepitaxy employing in-situ generated arsine

✍ Scribed by B. G. Pihlstrom; T. Y. Sheng; L. R. Thompson; G. J. Collins

Book ID: 112817455
Publisher: Springer US
Year: 1992
Tongue: English
Weight: 264 KB
Volume: 21
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02660454

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