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Ultrafast electron trapping times in low-temperature-grown gallium arsenide: The effect of the arsenic precipitate spacing and size

โœ Scribed by Loukakos, P. A.; Kalpouzos, C.; Perakis, I. E.; Hatzopoulos, Z.; Logaki, M.; Fotakis, C.


Book ID
121796312
Publisher
American Institute of Physics
Year
2001
Tongue
English
Weight
420 KB
Volume
79
Category
Article
ISSN
0003-6951

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