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The role of point defects and arsenic precipitates in carrier trapping and recombination in low-temperature grown GaAs

✍ Scribed by Lochtefeld, A. J.; Melloch, M. R.; Chang, J. C. P.; Harmon, E. S.

Book ID: 125846778
Publisher: American Institute of Physics
Year: 1996
Tongue: English
Weight: 275 KB
Volume: 69
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.116909

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