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Excess arsenic and point defects in GaAS grown by molecular beam epitaxy at low temperatures

✍ Scribed by L. G. Lavrent’eva; M. D. Vilisova; I. A. Bobrovnikova; S. E. Toropov; V. V. Preobrazhenskii; B. R. Semyagin; M. A. Putyato; V. V. Chaldyshev

Publisher
SP MAIK Nauka/Interperiodica
Year
2004
Tongue
English
Weight
449 KB
Volume
45
Category
Article
ISSN
0022-4766

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Point defects in III–V materials grown by molecular beam epitaxy at low temperature
✍ P. Hautojärvi; J. Mäkinen; S. Palko; K. Saarinen; C. Corbel; L. Liszkay 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 676 KB

The present understanding of the point defects in GaAs and InP grown by molecular beam epitaxy at low temperature (LT) is briefly reviewed. New results on vacancies and ion-type acceptors obtained by positron annihilation are given. Depending on the growth temperature, Ga vacancies or small vacancy