Point defects in III–V materials grown by molecular beam epitaxy at low temperature

✍ Scribed by P. Hautojärvi; J. Mäkinen; S. Palko; K. Saarinen; C. Corbel; L. Liszkay

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 676 KB
• Volume: 22
• Category: Article
• ISSN: 0921-5107
• DOI: 10.1016/0921-5107(93)90216-a

✦ Synopsis

The present understanding of the point defects in GaAs and InP grown by molecular beam epitaxy at low temperature (LT) is briefly reviewed. New results on vacancies and ion-type acceptors obtained by positron annihilation are given. Depending on the growth temperature, Ga vacancies or small vacancy clusters are seen in LT GaAs in the concentration range l0 ts cm -3. No signal from Ga antisites is found. The LT InP layers contain vacancies, identified as In vacancies, in the concentration range 10 ~ cm 3. Ion-type acceptors, probably In antisites, are also seen in concentrations of l0 w cm-3. The annealed layer contains small vacancy clusters.