✦ LIBER ✦

Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy

✍ Scribed by L. G. Lavrentieva; M. D. Vilisova; I. A. Bobrovnikova; I. V. Ivonin; V. V. Preobrazhenskii; V. V. Chaldyshev

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Origin of oval defects in GaAs layers gr

✍ K. Akimoto; M. Dohsen; M. Arai; N. Watanabe 📂 Article 📅 1985 🏛 Elsevier Science 🌐 English ⚖ 621 KB

Low-frequency noise in GaAs layers grown

✍ Munecazu Tacano; Yoshinobu Sugiyama; Takashi Taguchi; Hajime Soga 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 450 KB

Low temperature GaAs grown by gas source

✍ R. Droopad; K.T. Shiralagi; R.A. Puechner; K.Y. Choi; G.N. Maracas 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 493 KB

Characterization of low temperature GaAs

✍ W.C. Lee; T.M. Hsu; J.-I. Chyi; G.S. Lee; W.-H. Li; K.C. Lee 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 271 KB

Excess arsenic and point defects in GaAS

✍ L. G. Lavrent’eva; M. D. Vilisova; I. A. Bobrovnikova; S. E. Toropov; V. V. Preo 📂 Article 📅 2004 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 449 KB

Electrical properties of molecular beam

✍ J. Betko; P. Kordos; S. Kuklovsky; A. Förster; D. Gregusová; H. Lüth 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 360 KB