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Indium layers in low-temperature gallium arsenide: Structure and how it changes under annealing in the temperature range 500–700 °C

✍ Scribed by N. A. Bert; A. A. Suvorova; V. V. Chaldyshev; Yu. G. Musikhin; V. V. Preobrazhenskii; M. A. Putyato; B. R. Semyagin; R. Werner


Book ID
110119861
Publisher
Springer
Year
1998
Tongue
English
Weight
452 KB
Volume
32
Category
Article
ISSN
1063-7826

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