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Low temperature formation of silicon nitride and oxide films by the simultaneous use of a microwave ion source and an ICB source

✍ Scribed by J Ishikawa; K Matsugatani; G Takaoka

Publisher: Elsevier Science
Year: 1989
Tongue: English
Weight: 343 KB
Volume: 39
Category: Article
ISSN: 0042-207X
DOI: 10.1016/0042-207x(89)91101-9

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