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Low temperature formation of silicon nitride and oxide films by the simultaneous use of a microwave ion source and an ICB source : J. Ishikawa, K. Matsugatani and G. Takaoka. Vaccum39(11/12), 1111 (1989)


Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
127 KB
Volume
30
Category
Article
ISSN
0026-2714

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