๐”– Bobbio Scriptorium
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Low-resistance MOS technology using self-aligned refractory silicidation

โœ Scribed by Okabayashi, H.; Morimoto, M.; Nagasawa, E.


Book ID
114594862
Publisher
IEEE
Year
1984
Tongue
English
Weight
931 KB
Volume
31
Category
Article
ISSN
0018-9383

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๐Ÿ“œ SIMILAR VOLUMES


An MOS transistor with Schottky source/d
โœ S.A. Rishton; K. Ismail; J.O. Chu; K. Chan ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 190 KB

A new design of metal-oxide-semiconductor field effect transistor is presented, where both the gate resistance and the source-drain resistance are greatly reduced compared to conventional designs. The device employs Schottky source/drain contacts and a T-shaped gate. Characteristics are measured of