12-ps ECL using low-base-resistance Si bipolar transistor by self-aligned metal/IDP technology

✍ Scribed by Onai, T.; Ohue, E.; Tanabe, M.; Washio, K.

• Book ID: 114537079
• Publisher: IEEE
• Year: 1997
• Tongue: English
• Weight: 153 KB
• Volume: 44
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.644638