An MOS transistor with Schottky source/drain contacts and a self-aligned low-resistance T-gate

✍ Scribed by S.A. Rishton; K. Ismail; J.O. Chu; K. Chan

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 190 KB
• Volume: 35
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(96)00195-5

✦ Synopsis

A new design of metal-oxide-semiconductor field effect transistor is presented, where both the gate resistance and the source-drain resistance are greatly reduced compared to conventional designs. The device employs Schottky source/drain contacts and a T-shaped gate. Characteristics are measured of a 0.25 micron channel length silicon nMOS device with Ti/Ge/Si source and drain contacts and a Ti/AI metal gate.