✦ LIBER ✦
6124. Use of TiSi2 to form metal-oxide-silicon field effect transistors with self-aligned source/drain and gate electrode: T Yachi and S Suyama, J Vac Sci Technol, B3, 1985, 992–996
- Publisher
- Elsevier Science
- Year
- 1986
- Tongue
- English
- Weight
- 188 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0042-207X
No coin nor oath required. For personal study only.