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Low-frequency noise inn-GaN

✍ Scribed by N. V. D’yakonova; M. E. Levinshtein; S. Contreras; W. Knap; B. Beaumont; P. Gibart

Book ID
110119753
Publisher
Springer
Year
1998
Tongue
English
Weight
97 KB
Volume
32
Category
Article
ISSN
1063-7826

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## Abstract Noise characteristics of InGaN/GaN multiple‐quantum‐well (MQW) photodiodes (PD) and photoconductors (PC) were studied. 1/__f__ ‐type noise was examined in MQW PDs as a function of reverse bias, In content and temperature. Superposed multilevel Random Telegraph Signal Noise was observed