✦ LIBER ✦

Low frequency noise in InGaN/GaN MQW-based photodetector structures

✍ Scribed by Navarro, A. ;Rivera, C. ;Cuerdo, R. ;Pau, J. L. ;Pereiro, J. ;Muñoz, E.

Book ID: 105364131
Publisher: John Wiley and Sons
Year: 2007
Tongue: English
Weight: 321 KB
Volume: 204
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200673548

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

Noise characteristics of InGaN/GaN multiple‐quantum‐well (MQW) photodiodes (PD) and photoconductors (PC) were studied. 1/f ‐type noise was examined in MQW PDs as a function of reverse bias, In content and temperature. Superposed multilevel Random Telegraph Signal Noise was observed under reverse and forward biases. The dominant presence of this type of noise in MQW PCs seems to indicate that its origin was related to localization effects in the InGaN QWs. Detectivity of the MQW PDs was determined at various voltages for a wide range of temperatures. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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