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Low-Frequency Noise in Oxide-Based Resistive Random Access Memory Cells

✍ Scribed by Fang, Z.; Yu, H.Y.; Chroboczek, J.A.; Ghibaudo, G.; Buckley, J.; DeSalvo, B.; Li, X.; Kwong, D.L.

Book ID: 114620829
Publisher: IEEE
Year: 2012
Tongue: English
Weight: 496 KB
Volume: 59
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2011.2178245

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