A fundamental understanding of nickel oxide based resistive random access memory with high percentage of oxygen

Improved switching characteristics of pe

Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature

✍ Lee, Wootae ;Jo, Minseok ;Park, Jubong ;Lee, Joonmyoung ;Park, Sangsu ;Kim, Seon 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 278 KB

## Abstract We successfully fabricated perovskite oxide‐based resistance random access memory (RRAM) with improved resistance switching characteristics, at a low temperature. A high‐pressure oxygen‐annealed (HPOA) W/Al/Pr~0.7~Ca~0.3~MnO~3~ (PCMO)/Pt device shows good memory characteristics such as