Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature
✍ Scribed by Lee, Wootae ;Jo, Minseok ;Park, Jubong ;Lee, Joonmyoung ;Park, Sangsu ;Kim, Seonghyun ;Jung, Seungjae ;Shin, Jungho ;Lee, Daeseok ;Siddik, Manzar ;Hwang, Hyunsang
- Book ID
- 105366285
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 278 KB
- Volume
- 208
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
We successfully fabricated perovskite oxide‐based resistance random access memory (RRAM) with improved resistance switching characteristics, at a low temperature. A high‐pressure oxygen‐annealed (HPOA) W/Al/Pr~0.7~Ca~0.3~MnO~3~ (PCMO)/Pt device shows good memory characteristics such as device uniformity, endurance, and improved switching speed. X‐ray photoelectron spectroscopy reveals large amounts of oxygen effectively incorporated into the PCMO layer during HPOA, enhancing the crystallization of PCMO at low temperature. X‐ray diffraction analysis confirmed that an amorphous PCMO layer was converted to a polycrystalline structure. These results suggest that HPOA is a promising method for fabricating reliable perovskite oxide‐based RRAM at a low temperature.