Electrical conduction and bipolar switching properties in transparent vanadium oxide resistive random access memory (RRAM) devices

✍ Scribed by Chen, Kai-Huang; Liao, Chin-Hsiung; Tsai, Jen-Hwan; Wu, Sean

• Book ID: 118782216
• Publisher: Springer
• Year: 2012
• Tongue: English
• Weight: 650 KB
• Volume: 110
• Category: Article
• ISSN: 1432-0630
• DOI: 10.1007/s00339-012-7116-y