✦ LIBER ✦
Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide–Electrode System Through First-Principles Calculations
✍ Scribed by Susan Meñez Aspera, Hideaki Kasai, Hirofumi Kishi, Nobuyoshi Awaya, Shigeo Ohnishi, Yukio Tamai
- Book ID
- 115506920
- Publisher
- Springer US
- Year
- 2012
- Tongue
- English
- Weight
- 728 KB
- Volume
- 42
- Category
- Article
- ISSN
- 0361-5235
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