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Long wavelength strain-engineered InAs five stacks quantum dots laser diode growth by molecular beam epitaxy

✍ Scribed by You, M.H.; Li, Z.G.; Gao, X.; Qiao, Z.L.; Wang, Y.; Liu, G.J.; Li, L.; Li, M.

Book ID
123115096
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
503 KB
Volume
124
Category
Article
ISSN
0030-4026

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Long-wavelength strained-layer InGaAs/Ga
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## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri