𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Long wavelength strain-engineered InAs multi-layer stacks quantum dots laser diode on GaAs substrate

✍ Scribed by You, M. H.; Li, Z. G.; Gao, X.; Liu, X. D.; Deng, Y.; Liu, G. J.; Li, L.; Wei, Z. P.; Wang, X. H.

Book ID
119883905
Publisher
Springer
Year
2012
Tongue
English
Weight
342 KB
Volume
22
Category
Article
ISSN
1054-660X

No coin nor oath required. For personal study only.

πŸ“œ SIMILAR VOLUMES

Long-wavelength emission from single InA
Long-wavelength emission from single InAs quantum dots layer grown on porous GaAs substrate
✍ L. Beji; L. BouzaΓ―ene; B. IsmaΓ―l; L. Sfaxi; H. Maaref; H. Ben Ouada πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 182 KB

In this paper, we present the growth and photoluminescence (PL) results of InAs quantum dots (QDs) on a p-type porous GaAs (001) substrate. It has been shown that critical layer thickness of InAs overgrowth on porous GaAs has been enhanced compared to that deposited on nominal GaAs. Using porous GaA