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Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates

✍ Scribed by Zhukov, A. E.; Kovsh, A. R.; Maleev, N. A.; Mikhrin, S. S.; Ustinov, V. M.; Tsatsul’nikov, A. F.; Maximov, M. V.; Volovik, B. V.; Bedarev, D. A.; Shernyakov, Yu. M.; Kop’ev, P. S.; Alferov, Zh. I.; Ledentsov, N. N.; Bimberg, D.

Book ID
121443872
Publisher
American Institute of Physics
Year
1999
Tongue
English
Weight
216 KB
Volume
75
Category
Article
ISSN
0003-6951

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In this paper, we present the growth and photoluminescence (PL) results of InAs quantum dots (QDs) on a p-type porous GaAs (001) substrate. It has been shown that critical layer thickness of InAs overgrowth on porous GaAs has been enhanced compared to that deposited on nominal GaAs. Using porous GaA