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Long-wavelength InAs/GaAs quantum-dot laser diode monolithically grown on Ge substrate

✍ Scribed by Liu, Huiyun; Wang, Ting; Jiang, Qi; Hogg, Richard; Tutu, Frank; Pozzi, Francesca; Seeds, Alwyn

Book ID
118039580
Publisher
Nature Publishing Group
Year
2011
Tongue
English
Weight
761 KB
Volume
5
Category
Article
ISSN
1749-4885

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Long-wavelength emission from single InA
Long-wavelength emission from single InAs quantum dots layer grown on porous GaAs substrate
✍ L. Beji; L. BouzaΓ―ene; B. IsmaΓ―l; L. Sfaxi; H. Maaref; H. Ben Ouada πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 182 KB

In this paper, we present the growth and photoluminescence (PL) results of InAs quantum dots (QDs) on a p-type porous GaAs (001) substrate. It has been shown that critical layer thickness of InAs overgrowth on porous GaAs has been enhanced compared to that deposited on nominal GaAs. Using porous GaA