The spin dynamics in self-organized InAs/GaAs quantum dots have been studied by time-resolved photoluminescence performed under strictly resonant excitation conditions. It is demonstrated that the carrier spins in these nanostructures are totally frozen on the scale of the exciton lifetime.
Self organized InAs quantum dots grown on patterned GaAs substrates
β Scribed by Matthias Schramboeck; W. Schrenk; T. Roch; A.M. Andrews; M. Austerer; G. Strasser
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 235 KB
- Volume
- 83
- Category
- Article
- ISSN
- 0167-9317
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Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spo
In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also present