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Self organized InAs quantum dots grown on patterned GaAs substrates

✍ Scribed by Matthias Schramboeck; W. Schrenk; T. Roch; A.M. Andrews; M. Austerer; G. Strasser


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
235 KB
Volume
83
Category
Article
ISSN
0167-9317

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In this work we have studied the optical properties of InAs quantum dots (QDs) grown by molecular-beam epitaxy on GaAs (211)A, on (n11)A/B (where n is 1, 5 and 7), and on reference (100) substrates. Investigation of orientation and polarity effects by means of photoluminescence (PL) are also present