## Abstract Anodic oxide films were grown on SiC using various electrolytes. The obtained oxide films were compared and some of their electrophysical properties were investigated. Anodic oxidation of SiC was shown to be useful for precise removal of layers as well as for identification of the polar
Localized anodic oxide films on Si: preparation and properties
β Scribed by G. Mende; F. Fenske; H. Flietner; M. Jeske; J.W. Schultze
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 551 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0013-4686
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π SIMILAR VOLUMES
Impedance measurements and photocurrent spectroscopy have been used to examine the dependence on growth rate of the solid state properties of thin ( -c 20 nm) anodic oxide films on titanium. At room temperature, the relative permittivity and defect concentration profiles in the oxide were found to d
The rate of nucleation of the anodic oxide film on bismuth in 0.1 M NaOH is limited hy electrochemical reaction at the uncovered metal surface or surface diffusion to the periphery of a spreading oxide patch, not by incorporation into the growing lattice. Anodic oxide layers grown on bismuth consist
The transient poten+ response to a step chaage in current of both freshly prcpamd and aged bismuth ano& oxW films indxzted that the anodic 6lm had a non-stoichbamtric laya at the film-metal interfaa, the response rel%&ing the relaxation of sv charges of trapped electrons aad mobile ions. The idea is