✦ LIBER ✦

Limitations of LDD types of structures in deep-submicrometer MOS technology

✍ Scribed by A. Tasch; H. Shin; T. Bordelon; C. Maziar

Book ID: 126684125
Publisher: IEEE
Year: 1990
Tongue: English
Weight: 343 KB
Volume: 11
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.63018

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The challenge of signal integrity in dee

The challenge of signal integrity in deep-submicrometer CMOS technology

✍ Caignet, F.; Delmas-Bendhia, S.; Sicard, E. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 830 KB

Modeling of parasitic capacitances in de

Modeling of parasitic capacitances in deep submicrometer conventional and high-K dielectric MOS transistors

✍ Mohapatra, N.R.; Desai, M.P.; Narendra, S.G.; Ramgopal Rao, V. 📂 Article 📅 2003 🏛 IEEE 🌐 English ⚖ 565 KB

Experimentally-based analytical model of

Experimentally-based analytical model of deep-submicron LDD pMOSFETs in a Bi-MOS hybrid-mode environment

✍ Rofail, S.S.; Yeo Kiat Seng 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 390 KB

Use of the polysilicon gate layer for lo

Use of the polysilicon gate layer for local interconnect in a CMOS technology incorporating LDD structures

✍ El-Diwany, M.H.; Brassington, M.P.; Tuntasood, P.; Razouk, R.R.; Poulter, M.W. 📂 Article 📅 1988 🏛 IEEE 🌐 English ⚖ 376 KB

A Low-Noise Four-Stage Voltage-Controlle

A Low-Noise Four-Stage Voltage-Controlled Ring Oscillator in Deep-Submicrometer CMOS Technology

✍ Kim, Joo-Myoung; Kim, Seungjin; Lee, In-Young; Han, Seok-Kyun; Lee, Sang-Gug 📂 Article 📅 2013 🏛 Institute of Electrical and Electronics Engineers 🌐 English ⚖ 644 KB

Characterization of deep levels in Si-MO

Characterization of deep levels in Si-MOS structure using ICTS measurement

✍ Susumu Iwamoto; Haruhiko Yoshida; Seigo Kishino 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 179 KB

Interface traps and bulk traps induced by heavy metal impurities in Si-MOS structure were characterized by isothermal capacitance transient spectroscopy (ICTS). In addition, the use of an MOS inversion time is proposed for the detection of a very low density of heavy metal impurities in the ICTS mea