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Leakage current reduction due to hot carrier effects in n-channel polycrystalline silicon thin film transistors

✍ Scribed by G. Tallarida; A. Pecora; G. Fortunato; F. Plais; P. Legagneux; T. Kretz; D. Pribat

Book ID: 115990360
Publisher: Elsevier Science
Year: 1995
Tongue: English
Weight: 282 KB
Volume: 187
Category: Article
ISSN: 0022-3093
DOI: 10.1016/0022-3093(95)00137-9

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