Leakage current mechanism and effect of oxygen vacancy on the leakage current of Bi5Nb3O15 films

✍ Scribed by Kyung-Hoon Cho; Chang-Hak Choi; Joo-Young Choi; Tae-Geun Seong; Sahn Nahm; Chong-Yun Kang; Seok-Jin Yoon; Jong-Hee Kim

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 610 KB
• Volume: 30
• Category: Article
• ISSN: 0955-2219
• DOI: 10.1016/j.jeurceramsoc.2009.04.029

✦ Synopsis

The effect of oxygen partial pressure (OPP) on the leakage current density of Bi 5 Nb 3 O 15 (B 5 N 3 ) films grown on Pt electrodes was investigated. The leakage current density was very high for the film grown under a low OPP of 1.7 mTorr, but was significantly reduced by the subsequent annealing under a high oxygen pressure or for the film grown under high OPP of 5.1 mTorr. The variation of the leakage current density with OPP was explained by the number of oxygen vacancies, which produced electron trap sites at the interface between the Pt electrode and the B 5 N 3 film. Schottky emission was postulated as the leakage current mechanism of the B 5 N 3 films. The barrier height between the Pt electrode and the B 5 N 3 film grown under a high OPP of 5.1 mTorr was approximately 1.55 eV, but decreased to 0.81 eV for the film grown under a low OPP of 1.7 mTorr due to the presence of the oxygen vacancy.