Effects of annealing schedule on orienta
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H.Y. He; J.F. Huang; L.Y. Cao; L.S. Wang
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Article
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2006
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Elsevier Science
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English
โ 633 KB
Fatigue-free Bi 3.2 Nd 0.8 Ti 3 O 12 ferroelectric thin films were successfully prepared on p-Si(1 1 1) substrate using chemical solution deposition process. The orientation and formation of thin film under different annealing schedules were studied. XRD analysis indicated that (2 0 0)-oriented film