Fatigue-free Bi 3.2 Nd 0.8 Ti 3 O 12 ferroelectric thin films were successfully prepared on p-Si(1 1 1) substrate using chemical solution deposition process. The orientation and formation of thin film under different annealing schedules were studied. XRD analysis indicated that (2 0 0)-oriented films with degree of orientation of I (2 0 0) /I (1 1 7) = 2.097 and 0.466 were obtained by preannealing for 10 min at 400 โข C followed by rapid thermal annealing for 3, 10 and 20 min at 700 โข C, respectively, (0 0 8)-oriented films with degree of orientation of I (0 0 8) /I (1 1 7) = 1.706 were obtained by rapid thermal annealing for 3 min at 700 โข C without preannealing, and (0 0 8)-oriented films with degree of orientation of I (0 0 8) /I (1 1 7) = 0.719 were obtained by preheating the film from room temperature at 20 โข C/min followed by annealing for 10 min at 700 โข C. The a-axis and c-axis orientation decreased as increase of annealing time due to effects of (1 1 1)-oriented substrate. AFM analysis further indicated that preannealing at 400 โข C for 10 min followed by rapid thermal annealing for 3 min at 700 โข C resulted in formation of platelike crystallite parallel to substrate surface, however rapid thermal annealing for 3 min at 700 โข C without preannealing resulted in columnar crystallite perpendicular to substrate surface.