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Layer growth in silicon epitaxy

✍ Scribed by Jun-Ichi Nishizawa; Takeshi Terasaki; Masafumi Shimbo


Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
854 KB
Volume
13-14
Category
Article
ISSN
0022-0248

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The growth kinetics of Sic epitaxial layers has been investigated by sublimation sandwichmethod in vacuum a t temperature range from 1600 to 2100 O C . The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retardi

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## Abstract In the present work are presented the results of the thermodynamic analysis of the interaction processes in the system Si‐C‐H‐Cl in the temperature interval 1000‐3000 K. The equilibrium pressures of the components in the system Si‐C‐H‐Cl with taking account the formation of the condense