The growth kinetics of Sic epitaxial layers has been investigated by sublimation sandwichmethod in vacuum a t temperature range from 1600 to 2100 O C . The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retardi
β¦ LIBER β¦
Layer growth in silicon epitaxy
β Scribed by Jun-Ichi Nishizawa; Takeshi Terasaki; Masafumi Shimbo
- Publisher
- Elsevier Science
- Year
- 1972
- Tongue
- English
- Weight
- 854 KB
- Volume
- 13-14
- Category
- Article
- ISSN
- 0022-0248
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