The current understanding of epitaxial CVD silicon layer doping in the light of modelling and theory development (V). Special features of doping with arsenic in the range of small layer growth rates

✍ Scribed by Dr. H. Kühne; Dr. Th. Morgenstern

• Publisher: John Wiley and Sons
• Year: 1987
• Tongue: English
• Weight: 458 KB
• Volume: 22
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.2170220802