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Lattice parameters of GaN layers grown on a-plane sapphire: Effect of in-plane strain anisotropy

✍ Scribed by Darakchieva, V.; Paskov, P. P.; Paskova, T.; Valcheva, E.; Monemar, B.; Heuken, M.

Book ID: 121696907
Publisher: American Institute of Physics
Year: 2003
Tongue: English
Weight: 260 KB
Volume: 82
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1542931

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## Abstract Structural state of nonpolar a‐plane GaN layers grown by MOVPE on r‐plane sapphire is investigated by X‐ray diffraction method. Interplanar spacings were measured in three directions and corresponding strains were determined. A crystalline perfection was studied by measurement of diffra