Photodetectors were fabricated on GaAs/Si epitaxial structures grown on high resistivity Si substrates by modulated molecular beam epitaxy. Our efforts were focused on enhancing the substrate surface quality and optimizing the deposition conditions during the early stages of growth of the GaAs on th
β¦ LIBER β¦
Lattice mismatched InGaAs on silicon photodetectors grown by molecular beam epitaxy
β Scribed by N. A. Papanicolaou; G. W. Anderson; A. A. Iliadis; A. Christou
- Book ID
- 112819597
- Publisher
- Springer US
- Year
- 1993
- Tongue
- English
- Weight
- 667 KB
- Volume
- 22
- Category
- Article
- ISSN
- 0361-5235
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