✦ LIBER ✦

InGaAs/GaAs Core–Shell Nanowires Grown by Molecular Beam Epitaxy

✍ Scribed by Jabeen, F.; Grillo, V.; Martelli, F.; Rubini, S.

Book ID: 114571033
Publisher: IEEE
Year: 2011
Tongue: English
Weight: 951 KB
Volume: 17
Category: Article
ISSN: 1077-260X
DOI: 10.1109/jstqe.2010.2068279

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Strain in GaAs–MnAs core–shell nanowires

Strain in GaAs–MnAs core–shell nanowires grown by molecular beam epitaxy

✍ M. Hilse; Y. Takagaki; M. Ramsteiner; J. Herfort; S. Breuer; L. Geelhaar; H. Rie 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 678 KB

GaN Nanowires Grown by Molecular Beam Ep

GaN Nanowires Grown by Molecular Beam Epitaxy

✍ Bertness, K.A.; Sanford, N.A.; Davydov, A.V. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 956 KB

MnSZnSe on GaAs grown by molecular beam

MnSZnSe on GaAs grown by molecular beam epitaxy

✍ S. Sivananthan; L. Wang; R. Sporken; J. Chen; B.J. Skromme; David J. Smith 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 394 KB

Defects in the GaAs and InGaAs layers gr

Defects in the GaAs and InGaAs layers grown by low-temperature molecular-beam epitaxy

✍ L. G. Lavrentieva; M. D. Vilisova; I. A. Bobrovnikova; I. V. Ivonin; V. V. Preob 📂 Article 📅 2006 🏛 Springer 🌐 English ⚖ 311 KB

Fabrication and characterization of InGa

Fabrication and characterization of InGaAs/GaAs strained quantum wires grown by molecular beam epitaxy

✍ Y.-P. Chen; J.D. Reed; S.S. O'Keefe; W.J. Schaff; L.F. Eastman 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 575 KB

Long-wavelength strained-layer InGaAs/Ga

Long-wavelength strained-layer InGaAs/GaAs quantum-well lasers grown by molecular beam epitaxy

✍ T. Piwoński; P. Sajewicz; J. M. Kubica; M. Zbroszczyk; K. Regiński; B. Mroziewic 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB

## Abstract The operation in the 1020 nm wavelength range of strained‐layer InGaAs/GaAs separate‐confinement‐heterostucture lasers grown by molecular beam epitaxy is reported. The active region is formed by a single 80 Å thick InGaAs quantum well with an indium content of 25%, which is close to cri