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Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on Si

✍ Scribed by J. Werner; M. Oehme; A. Schirmer; E. Kasper; J. Schulze


Book ID
113937389
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
536 KB
Volume
520
Category
Article
ISSN
0040-6090

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Photodetectors were fabricated on GaAs/Si epitaxial structures grown on high resistivity Si substrates by modulated molecular beam epitaxy. Our efforts were focused on enhancing the substrate surface quality and optimizing the deposition conditions during the early stages of growth of the GaAs on th