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Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy

✍ Scribed by Z-Q. Fang; D. C. Look; C. Lu; H. Morkoç

Book ID
107453285
Publisher
Springer US
Year
2000
Tongue
English
Weight
155 KB
Volume
29
Category
Article
ISSN
0361-5235

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Strain relaxation in AlN/GaN heterostruc
Strain relaxation in AlN/GaN heterostructures grown by molecular beam epitaxy
✍ Dimitrakopulos, G. P. ;Komninou, Ph. ;Kehagias, Th. ;Sahonta, S.-L. ;Kioseoglou, 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 384 KB

## Abstract The strain distribution and defects in a graded AlN/GaN heterostructure comprising AlN layers from 3 nm up to 100 nm grown by plasma‐assisted MBE were studied using transmission electron microscopy techniques. Gradual strain relaxation was observed as well as strain partitioning between