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Trap gettering by isoelectronic doping of p-GaAs and n-GaAs grown by molecular beam epitaxy

✍ Scribed by Aizhen Li; H.K. Kim; J.C. Jeong; D. Wong; J.H. Zhao; Z.-Q. Fang; T.E. Schlesinger; A.G. Milnes

No coin nor oath required. For personal study only.

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