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Lateral uniformity in Sn- or Si-doped n-GaAs grown by molecular beam epitaxy

✍ Scribed by S. Hiyamizu; T. Fujii; K. Nanbu; H. Hashimoto


Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
288 KB
Volume
51
Category
Article
ISSN
0022-0248

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