The defects produced in 4H-SiC epitaxial layers by irradiation with 800 keV C + were characterized by Low Temperature Photoluminescence. Ion beam irradiation induces the formation of some sharp lines in the wavelength range 428-441 nm of the photoluminescence spectra, that are typically known as ''a
Laser-induced point-defect reaction in proton-irradiated SiC
β Scribed by M. Zimbone; G. Litrico; M. Barbera; G. A. Baratta; G. Foti
- Publisher
- Springer
- Year
- 2008
- Tongue
- English
- Weight
- 204 KB
- Volume
- 94
- Category
- Article
- ISSN
- 0721-7269
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