𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Laser annealing of the Si layers in Si/SiO2 multiple quantum wells

✍ Scribed by T. Arguirov; T. Mchedlidze; S. Kouteva-Arguirova; M. Kittler; R. Rölver; B. Berghoff; D. Bätzner; B. Spangenberg

Book ID
108215639
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
335 KB
Volume
159-160
Category
Article
ISSN
0921-5107

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Transport properties of double-gate SiO2
Transport properties of double-gate SiO2-Si-SiO2quantum well
✍ Prunnila, Mika ;Ahopelto, Jouni ;Sakaki, Hiroyuki 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 572 KB

## Abstract We report on fabrication and low temperature transport properties of double‐gate SiO~2~–Si–SiO~2~ quantum well with a 16.5 nm thick Si layer. The device is fabricated on a silicon‐on‐insulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport