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Effect of laser annealing on crystallinity of the Si layers in Si/SiO2 multiple quantum wells

✍ Scribed by T. Arguirov; T. Mchedlidze; V.D. Akhmetov; S. Kouteva-Arguirova; M. Kittler; R. Rölver; B. Berghoff; M. Först; D.L. Bätzner; B. Spangenberg

Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
422 KB
Volume
254
Category
Article
ISSN
0169-4332

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✍ Li Shuti; Fan Guanghan; Zhou Tianming; Zheng Shuwen; Sun Huiqing 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 164 KB

The influence of Si doping on the photoluminescence (PL) properties of (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P/Ga 0.5 In 0.5 P multiple-quantum-wells (MQWs) was studied. For the samples without p-type layers, the PL peak wavelength from (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P/Ga 0.5 In 0.5 P MQWs did not vary when Si w